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2xM378B5673FH0-CF8 Capacity 4GB (2x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
HMA82GR7MFR8N-UH Capacity 16GB (1x 16GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
5V Technology DDR Error Correction ECC Signal Processing Registered Form Factor 184-pin RDIMM Ranks Dual rank CAS Latency CL3 Configuration x4 Pieces in Kit 1 Compatibility
x4 configuration RAM kit is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT/s 240-pin EUDIMM RAM module from Samsung
Hynix 2GB (1x 2GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-dimm-4gb-1x-dr 2xM378B5673FH0-CF8 Capacity 4GB (2x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR3L 1333 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1333 MT s with an overall transfer rate of PC3L 10600. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL9, and is
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